Description
Capacity (GB)
512 GB
NAND Flash Memory
64-layer, QLC, Intel® 3D NAND
Bandwidth
Sequential Read: Up to 1500MB/s, Sequential Write: Up to 1000MB/s
Bandwidth
Random 4KB Reads: Up to 220,000 IOPS, Random 4KB Writes: Up to 220,00 IOPS
Interface
PCIe* 3.0×4, NVMe*
Form Factor, Height, Weight
80mm M.2 2280, S3, <10 grams
Power Consumption
Active: 100mW, Idle: 40mW
Operating Temperature
0° C to 70° C
Warranty
5-year limited warranty
